Field trial of a 15 Tb/s adaptive and gridless OXC supporting elastic 1000-fold all-optical bandwidth granularity

An adaptive gridless OXC is implemented using a 3D-MEMS optical backplane plus optical modules (sub-systems) that provide elastic spectrum and time switching functionality. The OXC adapts its architecture on demand to fulfill the switching requirements of incoming traffic. The system is implemented in a seven-node network linked by installed fiber and is shown to provide suitable architectures on demand for three scenarios with increasing traffic and switching complexity. In the most complex scenario, signals of mixed bit-rates and modulation formats are successfully switched with flexible per-channel allocation of spectrum, time and space, achieving over 1000-fold bandwidth granularity and 1.5 Tb/s throughput with good end-to-end performance

Bulk and Surface Nucleation Processes in Ag2S Conductance Switches

We studied metallic Ag formation inside and on the surface of Ag2S thin films, induced by the electric field created with a STM tip. Two clear regimes were observed: cluster formation on the surface at low bias voltages, and full conductance switching at higher bias voltages (V > 70mV). The bias voltage at which this transition is observed is in agreement with the known threshold voltage for conductance switching at room temperature. We propose a model for the cluster formation at low bias voltage. Scaling of the measured data with the proposed model indicates that the process takes place near steady state, but depends on the STM tip geometry. The growth of the clusters is confirmed by tip retraction measurements and topography scans. This study provides improved understanding of the physical mechanisms that drive conductance switching in solid electrolyte memristive devices.Comment: In press for PR

Experimental demonstration of gridless spectrum and time optical switching

An experimental demonstration of gridless spectrum and time switching is presented. We propose and demonstrate a bit-rate and modulation-format independent optical cross-connect architecture, based on gridless spectrum selective switch, 20-ms 3D-MEMS and 10-ns PLZT optical switches, that supports arbitrary spectrum allocation and transparent time multiplexing. The architecture is implemented in a four-node field-fiber-linked testbed to transport continuous RZ and NRZ data channels at 12.5, 42.7 and 170.8 Gb/s, and selectively groom sub-wavelength RZ channels at 42.7 Gb/s. We also showed that the architecture is dynamic and can be reconfigured to meet the routing requirements of the network traffic. Results show error-free operation with an end-to-end power penalty between 0.8 dB and 5 dB for all continuous and sub-wavelength channels

Electron Beam Effects in Ge–Se Thin Films and Resistance Change Memory Devices

Chalcogenide glasses are the advanced materials of choice for the emerging nanoionic memory devices – conductive bridge random access memory (CBRAM). To understand the nature of the effects occurring in these devices under influence of electron-beam radiation, the interaction of blanked chalcogenide films and nanostructured films containing chalcogenide glass and silver (Ag) source are studied. Raman spectroscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction are used for establishing the structural and compositional effects occurring under radiation. They have strong compositional dependence with the stoichiometric compositions being most stable showing less structural changes after radiation. These effects are associated with the availability of lone-pair electrons, their participation in the bonding configurations and the coupling of electron states in the bandgap. They are further enhanced in the bilayers by silver diffusion in the chalcogenide matrix, as a result of interaction with electrons. These effects are used to interpret the electrical performance of CBRAM devices after radiation. The devices are characterized by their resistance states, threshold voltage and endurance. Those based on selenium-rich and stoichiometric composition undergo continuous parameters changes with increase in the radiation dose while in the devices based on germanium-rich composition a counter play of the structural changes and expulsion of silver occur

Influence of Cu Diffusion Conditions on the Switching of Cu-SiO\u3csub\u3e2\u3c/sub\u3e-Based Resistive Memory Devices

This paper presents a study of Cu diffusion at various temperatures in thin SiO2 films. Film composition and diffusion products were analyzed using Secondary Ion Mass Spectroscopy, Rutherford Backscattering Spectrometry, X-ray Diffraction and Raman Spectroscopy methods. We found a strong dependence of the diffused Cu concentration, which varied between 0.8 at.% and 10-3 at.%, on the annealing temperature. X-ray diffraction and Raman studies revealed that Cu does not react with the SiO2 network and remains in elemental form after diffusion. Programmable Metallization Cell (PMC) resistive memory cells were fabricated with these Cu-diffused SiO2 films as the active elements and device performance is presented and discussed in the context of the materials characteristics

A quadtree-polygon-based scaled boundary finite element method for image-based mesoscale fracture modelling in concrete

A quadtree-polygon scaled boundary finite element-based approach for image-based modelling of concrete fracture at the mesoscale is developed. Digital images representing the two-phase mesostructure of concrete, which comprises of coarse aggregates and mortar are either generated using a take-and-place algorithm with a user-defined aggregate volume ratio or obtained from X-ray computed tomography as an input. The digital images are automatically discretised for analysis by applying a balanced quadtree decomposition in combination with a smoothing operation. The scaled boundary finite element method is applied to model the constituents in the concrete mesostructure. A quadtree formulation within the framework of the scaled boundary finite element method is advantageous in that the displacement compatibility between the cells are automatically preserved even in the presence of hanging nodes. Moreover, the geometric flexibility of the scaled boundary finite element method facilitates the use of arbitrary sided polygons, allowing better representation of the aggregate boundaries. The computational burden is significantly reduced as there are only finite number of cell types in a balanced quadtree mesh. The cells in the mesh are connected to each other using cohesive interface elements with appropriate softening laws to model the fracture of the mesostructure. Parametric studies are carried out on concrete specimens subjected to uniaxial tension to investigate the effects of various parameters e.g. aggregate size distribution, porosity and aggregate volume ratio on the fracture of concrete at the meso-scale. Mesoscale fracture of concrete specimens obtained from X-ray computed tomography scans are carried out to demonstrate its feasibility

High speed chalcogenide glass electrochemical metallization cells with various active metals

We fabricated electrochemical metallization (ECM) cells using a GaLaSO solid electrolyte, a InSnO inactive electrode and active electrodes consisting of various metals (Cu, Ag, Fe, Cu, Mo, Al). Devices with Ag and Cu active metals showed consistent and repeatable resistive switching behaviour, and had a retention of 3 and >43 days, respectively; both had switching speeds of < 5 ns. Devices with Cr and Fe active metals displayed incomplete or intermittent resistive switching, and devices with Mo and Al active electrodes displayed no resistive switching ability. Deeper penetration of the active metal into the GaLaSO layer resulted in greater resistive switching ability of the cell. The off-state resistivity was greater for more reactive active metals which may be due to a thicker intermediate layer